vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 1 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diodes, 890 nm, gaalas, dh description vsmf2893x01 series are infrared, 890 nm emitting diodes in gaalas (dh) technology with high radiant power and high speed, molded in clear, untinte d plastic packages (with lens) for surface mounting (smd). features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.55 ? aec-q101 qualified ? peak wavelength: ? p = 890 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 25 ? low forward voltage ? suitable for high pulse current operation ? terminal configurations: gu llwing or reserve gullwing ? package matches with detector vemd2xx3x01 and vemt2xx3x01 series ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? irda compatible data transmission ?3d tv ? ir touch panels ? miniature light barrier ? photointerrupters ? optical switch ? shaft encoders ? ir emitter source for proximity applications note ? test conditions see table basic characteristics note ? moq: minimum order quantity vsmf2893rgx01 VSMF2893GX01 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) vsmf2893rgx01 20 25 890 30 VSMF2893GX01 20 25 890 30 ordering information ordering code packaging remarks package form vsmf2893rgx01 tape and reel moq: 6000 pc s, 6000 pcs/reel reverse gullwing VSMF2893GX01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 2 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p ? 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. figure 9, j-std-020 t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 250 k/w 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21343 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21344 r thja = 250 k/w t amb - ambient temperature (c) i f - forward current (ma) basic charactersitics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.25 1.4 1.6 v i f = 1 a, t p = 100 s v f 2.3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 10 20 30 mw/sr i f = 1 a, t p = 100 s i e 180 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e 40 mw temperature coefficient of ? e i f = 100 ma tk ? e - 0.35 %/k angle of half intensity ? 25 deg peak wavelength i f = 30 ma ? p 870 890 910 nm spectral bandwidth i f = 30 ma ?? 40 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 30 ns fall time i f = 100 ma, 20 % to 80 % t f 30 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 12 mhz
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 3 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic charactersitics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radi ant power vs. wavelength fig. 7 - relative radiant in tensity vs. angular displacement fig. 8 - pulse forward current vs. pulse duration 18873_1 i f - forward current (ma) 1000 100 10 1 v f - forward voltage (v) 024 13 t p = 100 s t p /t = 0.001 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms i f - forward current (a) i e - radiant intensity (mw/sr) 0.001 0.01 0.1 1 0.1 1 10 100 1000 t p = 100 s 800 900 - wavelength (nm) 1000 20082 0 0.25 0.5 0.75 1.0 1.25 e rel - relative radiant power 22694 i e rel - relative radiant intensity ? - angular displacement 0.4 0.2 0 0.6 0 10 20 0.9 0.8 30 40 50 60 70 80 0.7 1.0 100 1000 0.01 0.1 1 10 100 t p - pulse duration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t amb < 50 c i f - forward current (ma)
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 4 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 2a, acc. to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: vsmf2893rgx01 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 5 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters: VSMF2893GX01
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 6 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters : vsmf2893rgx01
vsmf2893rgx01, VSMF2893GX01 www.vishay.com vishay semiconductors rev. 1.0, 26-feb-13 7 document number: 83484 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters : VSMF2893GX01
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